Method of reducing oxygen vacancies in a high k capacitor dielectric region, and DRAM processing methods

ABSTRACT

A capacitor processing method includes forming a capacitor comprising first and second electrodes having a capacitor dielectric region therebetween. The first electrode interfaces with the capacitor dielectric region at a first interface. The second electrode interfaces with the capacitor dielectric region at a second interface. The capacitor dielectric region has a plurality of oxygen vacancies therein. After forming the capacitor, an electric field is applied to the capacitor dielectric region to cause oxygen vacancies to migrate towards one of the first and second interfaces. Oxygen atoms are preferably provided at the one interface effective to fill at least a portion of the oxygen vacancies in the capacitor dielectric region. Preferably at least a portion of the oxygen vacancies in the high k capacitor dielectric region are filled from oxide material comprising the first or second electrode most proximate the one interface. In one implementation, a DRAM processing method includes forming DRAM circuitry comprising DRAM array capacitors having a common cell electrode, respective storage node electrodes, and a high k capacitor dielectric region therebetween. A voltage is applied to at least one of the first and second electrodes to produce a voltage differential therebetween under conditions effective to cause oxygen vacancies in the high k capacitor dielectric region to migrate toward one of the cell electrode or the respective storage node electrodes and react with oxygen to fill at least a portion of the oxygen vacancies in the capacitor dielectric region.

TECHNICAL FIELD

[0001] This invention relates to capacitor processing methods, forexample as found in logic and memory circuitry, and even morespecifically to DRAM processing methods.

BACKGROUND OF THE INVENTION

[0002] As DRAMs increase in memory cell density, there is a continuingchallenge to maintain sufficiently high storage capacitance despitedecreasing cell area. Additionally, there is a continuing goal tofurther decrease cell area. One principal way of increasing cellcapacitance is through cell structure techniques. Such techniquesinclude three-dimensional cell capacitors, If such as trenched orstacked capacitors. Yet as feature size continues to become smaller andsmaller, development of improved materials for cell dielectrics as wellas the cell structure are important. The feature size of 256 Mb DRAMsand beyond will be on the order of 0.25 micron or less, and conventionaldielectrics such as SiO₂ and Si₃N₄ might not be suitable because ofsmall dielectric constants.

[0003] Highly integrated memory devices, such as 256 Mbit DRAMs andbeyond, are expected to require a very thin dielectric film for the3-dimensional capacitor of cylindrically stacked or trench structures.To meet this requirement, the capacitor dielectric film thickness willbe below 2.5 nm of SiO₂ equivalent thickness.

[0004] Insulating inorganic metal oxide materials have high dielectricconstants and low leakage current which make them attractive as celldielectric materials for high density DRAMs and non-volatile memories.Such materials include tantalum pentoxide, barium strontium titanate,strontium titanate, barium titanate, lead zirconium titanate andstrontium bismuth titanate. Using such materials enables the creation ofmuch smaller and simpler capacitor structures for a given stored chargerequirement, enabling the packing density dictated by future circuitdesign.

[0005] Despite the advantages of high dielectric constants and lowleakage, insulating inorganic metal oxide materials suffer from manydrawbacks. For example, all of these materials incorporate oxygen or areotherwise exposed to oxygen for densification to produce the desiredcapacitor dielectric layer. Densification or other exposure to an oxygencontaining environment is utilized to fill oxygen vacancies whichdevelop in the material during its formation. For example whendepositing barium strontium titanate, the material as-deposited can havemissing oxygen atoms that may deform its crystalline structure and yieldpoor dielectric properties. To overcome this drawback, for example, thematerial is typically subjected to a high temperature anneal in thepresence of an oxygen ambient. The anneal drives any carbon present outof the layer and advantageously injects additional oxygen into the layersuch that the layer uniformly approaches a stoichiometry of five oxygenatoms for every two tantalum atoms. The oxygen anneal is commonlyconducted at a temperature of from about 400° C. to about 1000° C.utilizing one or more of O₃, N₂O and O₂. The oxygen containing gas istypically flowed through a reactor at a rate of from about 0.5 slm toabout 10 slm.

[0006] Unfortunately, such high temperature processing can degrade othersubstances in the circuitry. Such degradation can reduce the reliabilityof various circuit devices and has been viewed as a significant obstacleto incorporating high dielectric constant materials into integratedcircuits.

SUMMARY

[0007] The invention comprises capacitor processing methods, for exampleas found in logic and memory circuitry, and even more specifically toDRAM processing methods. In but one implementation, a capacitorprocessing method includes forming a capacitor comprising first andsecond electrodes having a capacitor dielectric region therebetween. Thefirst electrode interfaces with the capacitor dielectric region at afirst interface. The second electrode interfaces with the capacitordielectric region at a second interface. The capacitor dielectric regionhas a plurality of oxygen vacancies therein. After forming thecapacitor, an electric field is applied to the capacitor dielectricregion to cause oxygen vacancies to migrate towards one of the first andsecond interfaces. Oxygen atoms are preferably provided at the oneinterface effective to fill at least a portion of the oxygen vacanciesin the capacitor dielectric region. Preferably at least a portion of theoxygen vacancies in the high k capacitor dielectric region are filledfrom oxide material comprising the first or second electrode mostproximate the one interface.

[0008] In one implementation, a method of reducing oxygen vacancies in ahigh k capacitor dielectric region comprises causing oxygen vacancies tomigrate towards an interface between the capacitor dielectric region andone of a pair of opposing capacitor electrodes under conditionseffective to cause oxygen atoms present at the interface to fill atleast a portion of the vacancies after fabrication of the capacitorelectrodes and capacitor dielectric region.

[0009] In one implementation, a DRAM processing method includes formingDRAM circuitry comprising DRAM array capacitors having a common cellelectrode, respective storage node electrodes, and a high k capacitordielectric region therebetween. A voltage is applied to at least one ofthe first and second electrodes to produce a voltage differentialtherebetween under conditions effective to cause oxygen vacancies in thehigh k capacitor dielectric region to migrate toward one of the cellelectrode or the respective storage node electrodes and react withoxygen to fill at least a portion of the oxygen vacancies in thecapacitor dielectric region.

[0010] Other implementations are contemplated.

BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

[0012]FIG. 1 is a diagrammatic sectional view of a portion of asemiconductor wafer fragment at a processing step in accordance with anaspect of the invention.

[0013]FIG. 2 is a diagrammatic section view of a portion of asemiconductor fragment comprising DRAM circuitry at a processing step inaccordance with an aspect of the invention.

[0014]FIG. 3 is a schematic view of operation of a portion of the FIG. 2circuitry in accordance with an aspect of the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] This disclosure of the invention is submitted in furtherance ofthe constitutional purposes of the U.S. Patent Laws “to promote theprogress of science and useful arts” (Article 1, Section 8).

[0016] One exemplary method of processing a capacitor is describedinitially with reference to FIG. 1. There depicted is a semiconductorwafer fragment 10 comprising a bulk monocrystalline siliconsemiconductor substrate 12. In the context of this document, the term“semiconductor substrate” or “semiconductive substrate” is defined tomean any construction comprising semiconductive material, including, butnot limited to, bulk semiconductive materials such as a semiconductivewafer (either alone or in assemblies comprising other materialsthereon), and semiconductive material layers (either alone or inassemblies comprising other materials). The term “substrate” refers toany supporting structure, including, but not limited to, thesemiconductive substrates described above. A field oxide region 16 isformed relative to substrate 12, as are a plurality of transistor gateconstructions 14 and adjacent transistor source/drain regions 18 withinsubstrate 12. An insulating layer 20, for example borophosphosilicateglass (BPSG), is formed over gate constructions 14 and field oxideregion 16. A conductive contact plug 22 extends through insulating layer20 and electrically connects with a source drain region 18 between gateelectrode constructions 14. An example material is conductive dopedpolysilicon deposited by chemical vapor deposition. A silicide contactinterface or other material might also be received intermediate plug 22and source/drain region 18 (not shown). Example alternate materials, andby way of example only, for plug 22 include tungsten and aluminum.Preferably, some electrically conductive barrier layer 24 is providedover conductive plug 22 to serve as a shield to oxidation where asubsequently formed capacitor storage node layer comprises a conductiveoxide. Exemplary materials include tantalum nitride, tantalum siliconnitride, titanium nitride, titanium aluminum nitride, titanium siliconnitride, titanium nitride, molybdenum or the like.

[0017] Another electrically insulating layer 26 is formed overinsulating layer 20, with BPSG being one example preferred material. Anopening 28 is formed within material 26 effective to expose conductivematerial of barrier layer 24 or conductive plug 22. Alternately, barrierlayer 24 might be formed after formation of opening 28. A conductivefirst capacitor electrode layer 30 is thereafter deposited to less thancompletely fill opening 28. Such is preferably planarized back toisolate and form an isolated first capacitor electrode 30 within opening28. First electrode 30 preferably comprises one or more layers of one ormore conductive materials, with preferred materials being conductivemetal oxides, such as ruthenium oxide, iridium oxide, and titaniumoxygen nitride. Alternate materials include, by way of example only,conductively doped polysilicon, hemispherical grain polysilicon,platinum, ruthenium, iridium, palladium, tungsten, tungsten nitride,tantalum nitride, titanium nitride, and the like.

[0018] A capacitor dielectric layer 32 is formed over material 26 andfirst capacitor electrode 30. A conductive layer 34 is formed overdielectric layer 32. Further as shown in the illustrated example,another conductive layer 36 is formed above second conductive layer 34.Layers 34 and 36 in the illustrated example comprise a second capacitorelectrode. Capacitor dielectric layer 32 thereby is received betweenfirst electrode 30 and second electrode 34/36 and constitutes acapacitor dielectric region therebetween. Layer 32 might constitute oneor more layers or materials. Example materials include silicon dioxideor silicon nitride. In another and more preferred embodiment, capacitordielectric region 32 comprises a high k capacitor dielectric which willtypically have a plurality of oxygen vacancies received therein. Examplematerials include tantalum pentoxide, oxide paralectric materials,barium strontium titanate, strontium titanate, barium titanate, leadzirconium titanate, strontium bismuth titaate, or the like. In I thecontext of this document, “high k” constitutes a material having adielectric constant greater than or equal to 11. Such are preferablydeposited by known chemical vapor deposition techniques. An example andpreferred thickness for dielectric region 32 is from 40 Angstroms to2000 Angstroms. For purposes of the continuing discussion, firstelectrode 30 interfaces with capacitor dielectric region 32 at a firstinterface 38. Second capacitor electrode 34/36 interfaces with capacitordielectric region 32 at a second interface 40. A subsequently depositedor formed dielectric layer 41 is received over second capacitorelectrode 34/36.

[0019] Example preferred materials for second capacitor electrode layer34 include the same as those for first capacitor electrode 30. Preferredmaterials for conductive layer 36 preferably comprises polysilicon ortungsten.

[0020] In a preferred implementation, oxygen vacancies present incapacitor dielectric region 32 are caused to migrate towards one offirst and second interfaces 38, 40, respectively. Further in accordancewith the preferred implementation, effective conditions are provided tocause oxygen atoms present at the interface to fill at least a portionof the oxygen vacancies in capacitor dielectric region 32 and afterfabrication of the respective capacitor electrodes and capacitordielectric region. In a preferred implementation, migration is caused byimparting an electric field to capacitor dielectric region 32 effectiveto cause the oxygen vacancies to migrate towards one of the first andsecond interfaces. The electric field is preferably applied to besubstantially uniform across capacitor dielectric region 34 between thefirst and second capacitor electrodes. Oxygen vacancies in capacitordielectric region 32 are mobile under forces imparted by an electricfield of sufficient strength and under certain temperature conditions.Depending upon the polarity of the applied electric field, oxygenvacancies can migrate toward one of electrodes 30 or 34/36.

[0021] A preferred manner of applying an electric field is to apply avoltage to at least one of first electrode 30 and second electrode 34/36to produce a voltage differential therebetween. An example preferredvoltage for application to second capacitor electrode 34/36 is 2.5volts, while that applied to first capacitor electrode 30 is −1.0 volt.Such a positive bias on second electrode 34/36 will cause oxygenvacancies to migrate towards second interface 40. Reversing thevoltages, and alternate voltages, could of course be utilized withoutdeparting from the principles of this aspect of the invention. By way ofexample only, voltage might be only applied to one of first electrode 30and second electrode 34/36. Oxygen vacancy migration can further befacilitated by applying a suitable high temperature during applicationof the electric field. The elevated temperature is most preferably sometemperature less than 400° C. to avoid the high temperature processingproblems associated with the prior art, as described in the Backgroundsection above. Yet, elevated temperature is preferably at least 50° C.,and more preferably at least 100° C. during application of the electricfield. One example preferred process where dielectric region 32 consistsessentially of a 200 Angstrom thick barium strontium titanate film with51.0 atomic percent Ti includes an electric field of about 1500 kV/cmwhere the top electrode is provided at a bias voltage of 3.0 volts andthe bottom electrode at −1.0 volts for about 2 minutes and at 200° C. to225° C.

[0022] It is believed that the mere migration of oxygen vacancies fromthroughout a capacitor dielectric region to be positioned and morelocalized proximate one of the capacitor electrodes can itself reduceleakage current, increase capacitance and improve reliable operation.However further most preferably, oxygen atoms are preferably provided atthe interface to which at least some of the oxygen vacancies havemigrated and under conditions effective to fill at least a portion ofthose oxygen vacancies in capacitor dielectric region 32. Suchconditions preferably include a temperature of at least 50° C., andagain less than 400° C. to preclude the prior art high temperatureprocessing problems described above. An example preferred temperature isat least 200° C. for about 2 minutes for the treatments indicated above(i.e., for barium strontium titanate). Where oxygen is provided at theone interface, the application of an electric field (for example asdescribed above) in combination with the elevated temperature can resultin oxygen vacancy filling at the interface substantially simultaneouslywith the migration.

[0023] Oxygen atoms available for filling oxygen vacancies might beprovided at the interface by a number of different manners. In but oneembodiment, the oxygen atoms might be provided by diffusion of oxygenthrough the first or second electrode most proximate the one interfaceto which the oxygen vacancies have migrated. For example with respect tothe FIG. 1 embodiment, and before or after layer 41 is deposited,materials for layers 34 and 36 and conditions might be chosen duringprocessing whereby oxygen atoms can diffuse through layers 34 and 36 tointerface 40 for combination with oxygen vacancies which have theremigrated. For example, one of layers 34 or 36 (or both) could bedeposited in an oxidizing ambient, for example comprising O₂, N₂O and/orO₃. A specific example CVD process for ruthenium oxide includesprecursors of ruthenocene [Ru(C₂H₅)₂] and one or more oxygen containinggases, such as O₂, O₃ or N₂O. The ruthenocene is preferably maintainedas a liquid at 90° C. with a carrier gas such as argon bubbledtherethrough to a reactor at from 5 sccm to 10 sccm. Example oxygen gasflow is at 200 sccm. Example reactor temperature and pressure are 450°C. and 50 mTorr, respectively. An example CVD process for platinumincludes precursors of trimethylcyclopentadienylplatinum and one or moreoxygen containing gases, such as O₂, O₃ or N₂O. Thetrimethylcyclopentadienylplatinum is preferably maintained as a liquidat 30° C. with a carrier gas such as argon bubbled therethrough to areactor at from 150 sccm. Example N₂O gas flow is at 400 sccm. Examplereactor temperature and pressure are 450° C. and 10 Torr, respectively.The oxygen atoms in such deposition will typically form little if anyoxide with the platinum, and rather be suspended within the platinumlayer.

[0024] Alternately by way of example only, deposition might occur in anon-oxidizing ambient and choosing an electrode material which isdiffusive to oxygen (i.e., Pt), and subsequently conducting andoxidizing anneal. For example, platinum could be deposited by sputteringor CVD without oxygen atom incorporation. An example subsequentoxidizing anneal includes an oxygen containing gas environment (i.e.,O₂, O₃, N₂O, and the like) at from 400° C. to 800° C., from 1 Torr to760 Torr, and for from 10 seconds to 30 minutes.

[0025] Alternately, and by way of example only, various capacitorconstructions might be provided to have edge-exposed capacitordielectric regions. In such instances, oxygen atoms might be provided bylateral diffusion of oxygen from the edges along the subject interfacesfor providing oxygen for vacancy filling. An example process for doingso is that described immediately above, and even where the outerelectrode material is not necessarily comprised of a material readilydiffusive to oxygen.

[0026] By way of further alternative, and in a most preferred example,at least the first or second electrode most proximate the one interfaceto which the oxygen vacancy has migrated preferably comprises oxygenatoms as formed. Thereby the oxygen atoms inherently present within theconductive electrode material can be provided to fill the oxygenvacancies in the dielectric. The most example preferred materials forachieving the same include the conductive metal oxides referred toabove.

[0027] The above-described methods provide but exemplary preferredmethods of reducing oxygen vacancies in a high k capacitor dielectricregion by causing oxygen vacancies to migrate towards an interfacebetween a capacitor dielectric region and one of a pair of opposingcapacitor electrodes, and under conditions effective to cause oxygenatoms present at the interface to fill at least a portion of thevacancies after fabrication of the capacitor electrodes and capacitordielectric region. Alternate methods are also of course contemplated.

[0028] U.S. patent application Ser. No. 09/326,429 entitled “DielectricCure for Reducing Oxygen Vacancies”, filed on Jun. 4, 1999 and listingthe inventors as Cem Basceri and Gurtej S. Sandhu is hereby incorporatedby reference.

[0029] Further by way of example only, the above and other aspects ofthe invention are contemplated in connection with DRAM processingmethods. Exemplary DRAM circuitry is described with reference to FIG. 2.A wafer fragment 110 comprises two memory cells, with each comprising amemory cell storage capacitor 112 and a shared bit contact 114.Capacitors 112 electrically connect with substrate diffusion regions 118through polysilicon and/or silicide regions 116. Diffusion regions 118constitute a pair of source/drain regions for individual field effecttransistors. Individual storage capacitors 112 comprise a firstcapacitor electrode 120 in electrically connection with one of a pair ofsource/drain regions 118 of one field effect transistor, and a secondcapacitor electrode 124. Second capacitor electrode 124 preferablycomprises a cell electrode common to all capacitors within the array. Acapacitor dielectric region 122 is received intermediate first capacitorstorage node electrodes 120 and second common cell electrode 124.Preferred material for electrodes 120 and 124, and for capacitordielectric region 122, are those as described above.

[0030] An insulating layer 126 is formed over second capacitor electrode124. A bit line 128 of an array of bit lines is fabricated in electricalconnection with bit contact 114. An array of word lines 130 isfabricated to constitute gates of individual field effect transistors toenable selective gating of the capacitors relative to bit contact 114 inultimate operation of the circuitry. The above describes but oneexemplary process and structure in forming DRAM circuitry comprisingDRAM array capacitors having a common cell electrode, respective storagenode electrodes, and a high k capacitor dielectric region therebetween.Most preferably, at least one and preferably both of the common cellelectrode and the respective storage node electrodes comprise one ormore conductive metal oxides, as described above.

[0031] In accordance with one preferred aspect of the invention, a firstvoltage is applied to cell electrode 124 and a different second voltageis applied to storage node electrodes 120 under conditions effective tocause oxygen vacancies in capacitor dielectric region 122 to migratetoward one of cell electrode 124 or respective storage node electrodes120, and to react with oxygen to fill at least a portion of the oxygenvacancies in capacitor dielectric region 122. Preferred conditions andmethods are as described above relative to providing oxygen atinterfaces between electrodes 124/120 with respect to capacitordielectric region 122. Most preferably, one or both of cell electrode124 or storage node electrodes 120 comprise a conductive metal oxide,with the oxygen for filling vacancies coming from such solid electrodematerial.

[0032]FIG. 3 schematically illustrates a preferred processing, wherebythe first voltage and as applied to cell electrode 124 is V_(cc)/2,where V_(cc) refers to the internal operating voltage of the DRAMcircuitry. An example existing preferred voltage for V_(cc) is 3.0volts. The second voltage applied to storage node electrodes 20preferably comprises −1.0 volt in such instance. Such can effectivelyresult from a −1.0 volt being applied to source/drain diffusion regions118 by holding/bringing the bias potential of the backside of a typicalp-type substrate to −1.0 volt with a charge pump. A p-well to buriedcontact region 118 diode 150 is effectively created as shown. Theexample preferred biasing will cause oxygen vacancy migration towardscell electrode 124. The applied voltages could be reversed to causeoxygen vacancy migration towards storage node electrodes 120. Mostpreferably, the first and second applied voltages remain substantiallyconstant for at least 15 seconds, and more preferably for at least oneminute. Further most preferably, refresh circuitry of the DRAM circuitry(not shown) remains in an “off” condition during the method. Furthermost preferably, the array capacitors have no charge written into themduring the processing. Processing in this manner where void of chargeand void of recess operation will facilitate electric field stabilityand maintenance across capacitor dielectric region 122 during theabove-described and preferred burn-in processing to achieve oxygenvacancy migration and filling. The invention also contemplates oxygenvacancy migration in capacitors in DRAM and other circuitry regardlessof oxygen vacancy fill.

[0033] Further, the invention contemplates application of a firstvoltage greater than ground to a cell electrode and a second voltageless than ground to storage node electrodes of DRAM circuitry and at atemperature of at least 50° C. while refresh circuitry of the DRAMcircuitry remains in an “off” condition regardless of high k dielectricmaterials or oxygen vacancy presence. Further, the inventioncontemplates application of a first voltage greater than ground to thecell electrode and a second voltage less than ground to the storage nodeelectrodes and at a temperature of at least 50° C. while the arraycapacitors have no charge written into them regardless of high kcapacitor dielectric material, oxygen vacancy presence, or operation ofrefresh circuitry of the DRAM circuitry.

[0034] The invention also contemplates application of a voltage to onlyone of cell electrode 124 or storage node electrodes 120, and not theother.

[0035] In compliance with the statute, the invention has been describedin language more or less specific as to structural and methodicalfeatures. It is to be understood, however, that the invention is notlimited to the specific features shown and described, since the meansherein disclosed comprise preferred forms of putting the invention intoeffect. The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1. A capacitor processing method comprising: forming a capacitorcomprising first and second electrodes having a capacitor dielectricregion therebetween, the first electrode interfacing with the capacitordielectric region at a first interface, the second electrode interfacingwith the capacitor dielectric region at a second interface, thecapacitor dielectric region having a plurality of oxygen vacanciestherein; and after forming said capacitor, applying an electric field tothe capacitor dielectric region to cause oxygen vacancies to migratetowards one of the first and second interfaces.
 2. The method of claim 1wherein the electric field is applied by applying a voltage to at leastone of the first and second electrodes to produce a voltage differentialtherebetween.
 3. The method of claim 1 comprising forming the first orsecond electrode most proximate the one interface to comprise aconductive metal oxide.
 4. The method of claim 1 comprising forming thecapacitor dielectric region to predominately comprise a high kdielectric.
 5. The method of claim 1 wherein the applying comprises atemperature of at least 50° C. during the applying.
 6. The method ofclaim 1 wherein the applying comprises a temperature of at least 100° C.during the applying.
 7. The method of claim 1 wherein the applyingcomprises a temperature of less than 400° C. during the applying.
 8. Acapacitor processing method comprising: forming a capacitor comprisingfirst and second electrodes having a capacitor dielectric regiontherebetween, the first electrode interfacing with the capacitordielectric region at a first interface, the second electrode interfacingwith the capacitor dielectric region at a second interface, thecapacitor dielectric region having a plurality of oxygen vacanciestherein; after forming said capacitor, applying an electric field to thecapacitor dielectric region to cause oxygen vacancies to migrate towardsone of the first and second interfaces; and providing oxygen atoms atthe one interface effective to fill at least a portion of the oxygenvacancies in the capacitor dielectric region.
 9. The method of claim 8wherein the oxygen atoms are provided by diffusion of oxygen through thefirst or second electrode most proximate the one interface.
 10. Themethod of claim 8 wherein the oxygen atoms are provided by lateraldiffusion of oxygen along the one interface.
 11. The method of claim 8wherein the first or second electrode most proximate the one interfacecomprises oxygen as formed, the oxygen atoms being provided by oxygenatoms of the most proximate electrode.
 12. The method of claim 8 whereinthe first or second electrode most proximate the one interface comprisesa conductive metal oxide, the oxygen atoms being provided by oxide ofthe most proximate electrode.
 13. The method of claim 8 wherein theelectric field is applied by applying a voltage to at least one of thefirst and second electrodes to produce a voltage differentialtherebetween.
 14. The method of claim 8 wherein the providing occursduring the applying.
 15. The method of claim 8 wherein the providingoccurs during the applying, and the providing comprises a temperature ofat least 50° C.
 16. The method of claim 8 wherein the providing occursduring the applying, and the providing comprises a temperature less than400° C.
 17. A capacitor processing method comprising: forming acapacitor comprising first and second electrodes having a high kcapacitor dielectric region therebetween, the first and secondelectrodes comprising one or more conductive metal oxides, the firstelectrode interfacing with the high k capacitor dielectric region at afirst interface, the second electrode interfacing with the high kcapacitor dielectric region at a second interface, the high k capacitordielectric region having a plurality of oxygen vacancies therein; afterforming said capacitor, applying an electric field to the high kcapacitor dielectric region to cause oxygen vacancies to migrate towardsone of the first and second interfaces; and filling at least a portionof the oxygen vacancies in the high k capacitor dielectric region fromoxide of the first or second electrode most proximate the one interface.18. The method of claim 17 wherein the filling comprises providing atemperature of at least 50° C. during the applying.
 19. The method ofclaim 17 wherein the filling comprises providing a temperature of atleast 100° C. during the applying.
 20. The method of claim 17 whereinthe filling comprises providing a temperature of less than 400° C.during the applying.
 21. The method of claim 17 wherein the electricfield is applied by applying a voltage to at least one of the first andsecond electrodes to produce a voltage differential therebetween. 22.The method of claim 17 wherein the electric field is substantiallyuniform across the high k capacitor dielectric layer.
 23. A method ofreducing oxygen vacancies in a high k capacitor dielectric regioncomprising causing oxygen vacancies to migrate towards an interfacebetween the capacitor dielectric region and one of a pair of opposingcapacitor electrodes under conditions effective to cause oxygen atomspresent at the interface to fill at least a portion of the vacanciesafter fabrication of the capacitor electrodes and capacitor dielectricregion.
 24. The method of claim 23 wherein the causing comprises atemperature above room temperature.
 25. The method of claim 23 whereinthe causing comprises a temperature of at least 50° C.
 26. The method ofclaim 23 wherein the causing comprises a temperature of at least 100° C.27. The method of claim 23 wherein the causing comprises a temperatureof at less than 400° C.
 28. The method of claim 23 wherein the causingcomprises applying an electric field.
 29. The method of claim 23 whereinthe causing comprises a temperature of at least 50° C. and applying anelectric field.
 30. The method of claim 23 wherein the causing comprisesapplying a voltage to at least one of the pair of electrodes to producea voltage differential therebetween.
 31. The method of claim 23 whereinthe oxygen atoms come from one of the capacitor electrodes.
 32. Themethod of claim 23 wherein the oxygen atoms come from solid electrodematerial of one of the capacitor electrodes.
 33. A DRAM processingmethod comprising: forming DRAM circuitry comprising DRAM arraycapacitors having a common cell electrode, respective storage nodeelectrodes, and a high k capacitor dielectric region therebetween; andapplying a first voltage to one of the cell electrode or the storagenode electrodes under conditions effective to cause oxygen vacancies inthe high k capacitor dielectric region to migrate toward one of the cellelectrode or the respective storage node electrodes and react withoxygen to fill at least a portion of the oxygen vacancies in thecapacitor dielectric region.
 34. The method of claim 33 wherein theapplied voltages cause the oxygen vacancies to migrate toward the cellelectrode.
 35. The method of claim 33 wherein the applied voltages causethe oxygen vacancies to migrate toward the storage node electrodes. 36.The method of claim 33 wherein the oxygen is provided by diffusion ofoxygen through one of the cell electrode or the storage node electrodes.37. The method of claim 33 wherein the oxygen is provided by lateraldiffusion of oxygen along an interface between the high k dielectriclayer and the one of the cell electrode or the storage node electrodes.38. The method of claim 33 wherein the one of the cell electrode or thestorage node electrodes comprises oxygen as formed, the oxygen whichreacts being provided by oxygen atoms of the one of the cell electrodeor the storage node electrodes.
 39. The method of claim 33 wherein theone of the cell electrode or the storage node electrodes comprises aconductive metal oxide, the oxygen being provided by oxide of the one ofthe cell electrode or the storage node electrodes.
 40. The method ofclaim 33 wherein the applying comprises a temperature of at least 50° C.41. The method of claim 33 wherein the applying comprises a temperatureof at least 100° C.
 42. The method of claim 33 wherein the applyingcomprises a temperature of less than 400° C.
 43. The method of claim 33further comprising applying a different second voltage to the other ofthe cell electrode or the storage node electrodes, one of the first andsecond voltages comprises V_(cc)/2 and the other the first and secondvoltages comprises a negative voltage relative to ground voltage. 44.The method of claim 43 wherein the first voltage is applied to the cellelectrode and comprises V_(cc)/2, and the second voltage is applied tothe storage node electrodes and comprises a negative voltage relative toground voltage.
 45. The method of claim 33 wherein refresh circuitry ofthe DRAM circuitry remains in an “off” condition during the method. 46.A DRAM processing method comprising: forming DRAM circuitry comprisingDRAM array capacitors having a common cell electrode, respective storagenode electrodes, and a high k capacitor dielectric region therebetween;and applying a first voltage to one of the cell electrode or the storagenode electrodes under conditions effective to cause oxygen vacancies inthe high k capacitor dielectric region to migrate toward one of the cellelectrode or the respective storage node electrodes.
 47. The method ofclaim 46 wherein the applying comprises a temperature of at least 50° C.48. The method of claim 46 wherein the applying comprises a temperatureof at least 100° C.
 49. The method of claim 46 wherein the applyingcomprises a temperature of less than 400° C.
 50. The method of claim 46wherein refresh circuitry of the DRAM i circuitry remains in an “off”condition during the method.
 51. A DRAM processing method comprising:forming DRAM circuitry comprising DRAM array capacitors having a commoncell electrode, respective storage node electrodes, and a high kcapacitor dielectric region therebetween, at least one of the commoncell electrode and the respective storage node electrodes comprising oneor more metal oxides; and applying a first voltage to the cell electrodeand a different second voltage to the storage node electrodes underconditions effective to cause is oxygen vacancies in the capacitordielectric region to migrate toward one of the cell electrode or therespective storage node electrodes and react with oxygen from the oxideof the one electrode to fill at least a portion of the oxygen vacanciesin the high k capacitor dielectric region, one of the first and secondvoltages being positive relative to ground voltage, the other of thefirst and second voltages being negative relative to ground voltage. 52.The method of claim 51 wherein the applied voltages cause the oxygenvacancies to migrate toward the cell electrode.
 53. The method of claim51 wherein the applied voltages cause the oxygen vacancies to migratetoward the storage node electrodes.
 54. The method of claim 51 whereinthe applying comprises a temperature of at least 50° C.
 55. The methodof claim 51 wherein the applying comprises a temperature of at least100° C.
 56. The method of claim 51 wherein the applying comprises atemperature of less than 400° C.
 57. The method of claim 51 wherein oneof the first and second la voltages comprises V_(cc)/2 and the other thefirst and second voltages comprises a negative voltage relative toground voltage.
 58. The method of claim 51 wherein the first voltagecomprises V_(cc)/2 and the second voltage comprises a negative voltagerelative to ground voltage.
 59. The method of claim 51 wherein refreshcircuitry of the DRAM circuitry remains in an “off” condition during themethod.
 60. A DRAM processing method comprising: forming DRAM circuitrycomprising DRAM array capacitors having a common cell electrode,respective storage node electrodes, and a capacitor dielectric regiontherebetween; and applying a first voltage greater than ground to thecell electrode and a second voltage less than ground to the storage nodeelectrodes and at a temperature of at least 50° C. while refreshcircuitry of the DRAM circuitry remains in an “off” condition.
 61. Themethod of claim 60 wherein the capacitor dielectric region comprises ahigh k dielectric.
 62. The method of claim 60 wherein the first voltagecomprises V_(cc)/2 and the second voltage comprises about −1 volt. 63.The method of claim 60 wherein the first and second voltages remainsubstantially constant for at least 15 seconds.
 64. The method of claim60 wherein the first and second voltages remain substantially constantfor at least one minute.
 65. A DRAM processing method comprising:forming DRAM circuitry comprising DRAM array capacitors having a commoncell electrode, respective storage node electrodes, and a capacitordielectric region therebetween; and applying a first voltage greaterthan ground to the cell electrode and a second voltage less than groundto the storage node electrodes and at a temperature of at least 50° C.while the array capacitors have no charge written into them.
 66. Themethod of claim 65 wherein the capacitor dielectric region comprises ahigh k dielectric.
 67. The method of claim 65 wherein the first voltagecomprises V_(cc)/2 and the second voltage comprises about −1 volt. 68.The method of claim 65 wherein the first and second voltages remainsubstantially constant for at least 15 seconds.
 69. The method of claim65 wherein the first and second voltages remain substantially constantfor at least one minute.
 70. The method of claim 65 wherein refreshcircuitry of the DRAM circuitry remains in an “off” condition during themethod.